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6/29/04 www.irf.com 1 irf7473 hexfet power mosfet telecom and data-com 24 and 48v input dc-dc converters motor control uninterrutible power supply benefits applications ultra low on-resistance high speed switching low gate drive current due to improved gate charge characteristic improved avalanche ruggedness and dynamic dv/dt fully characterized avalanche voltage and current parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 6.9 i d @ t a = 70c continuous drain current, v gs @ 10v 5.5 a i dm pulsed drain current 55 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 5.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 typical smps topologies full and half bridge 48v input circuit forward 24v input circuit so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance v dss r ds(on) max i d 100v 26 m @v gs = 10v 6.9a

irf7473 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 10 ??? ??? s v ds = 50v, i d = 4.1a q g total gate charge ??? 61 ??? i d = 4.1a q gs gate-to-source charge ??? 21 ??? nc v ds = 50v q gd gate-to-drain ("miller") charge ??? 19 ??? v gs = 10v, t d(on) turn-on delay time ??? 24 ??? v dd = 50v t r rise time ??? 20 ??? i d = 4.1a t d(off) turn-off delay time ??? 29 ??? r g = 6.0 ? t f fall time ??? 11 ??? v gs = 10v c iss input capacitance ??? 3180 ??? v gs = 0v c oss output capacitance ??? 230 ??? v ds = 25v c rss reverse transfer capacitance ??? 120 ??? pf ? = 1.0mhz c oss output capacitance ??? 830 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 150 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 230 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 140 mj i ar avalanche current ??? 4.1 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 4.1a, v gs = 0v t rr reverse recovery time ??? 55 ??? ns t j = 25c, i f = 4.1a q rr reverse recoverycharge ??? 140 ??? nc di/dt = 100a/s diode characteristics 2.3 55 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 22 26 m ? v gs = 10v, i d = 4.1a v gs(th) gate threshold voltage 3.5 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 1.0 a v ds = 95v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current
irf7473 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 6.9a 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.5v 6.0v 5.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.5v 0.01 0.1 1 10 100 1000 5 6 7 8 9 10 11 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v
irf7473 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.1a v = 20v ds v = 50v ds v = 80v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irf7473 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. ambient temperature
irf7473 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.8a 3.3a 4.1a 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.020 0.025 0.030 0.035 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 6.9a 0 20 40 60 i d , drain current (a) 0.022 0.024 0.026 0.028 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
irf7473 www.irf.com 7 so-8 package details k x 45 c 8x l 8x h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1 so-8 part marking
irf7473 8 www.irf.com
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 16mh r g = 25 ? , i as = 4.1a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss i sd 4.1a, di/dt 210a/s, v dd v (br)dss , t j 150c 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 6/04

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